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FTK6960P датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK6960P
подробное описание детали  60V N-Channel MOSFETs
PDF  5 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6960P датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK6960P Datasheet HTML 1Page - First Silicon Co., Ltd FTK6960P Datasheet HTML 2Page - First Silicon Co., Ltd FTK6960P Datasheet HTML 3Page - First Silicon Co., Ltd FTK6960P Datasheet HTML 4Page - First Silicon Co., Ltd FTK6960P Datasheet HTML 5Page - First Silicon Co., Ltd  
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60V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.036
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=20A
---
5.1
6
mΩ
VGS=4.5V , ID=10A
---
5.9
7.5
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.08
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
15
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=30V , VGS=4.5V , ID=10A
---
32.8
65
nC
Qgs
Gate-Source Charge3 , 4
---
10.8
20
Qgd
Gate-Drain Charge3 , 4
---
11.6
22
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=3.3Ω
ID=1A
---
20
40
ns
Tr
Rise Time3 , 4
---
14.2
28
Td(off)
Turn-Off Delay Time3 , 4
---
61.2
122
Tf
Fall Time3 , 4
---
16.8
34
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
4740
7110
pF
Coss
Output Capacitance
---
325
488
Crss
Reverse Transfer Capacitance
---
161
332
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.6
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
100
A
ISM
Pulsed Source Current3
---
---
200
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=60.1A.,RG=25Ω,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
FTK6960P
2018. 11. 19
2/5
Revision No : 0



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