ACTT4X-800E datasheet(1/2 Pages) ISC

номер детали	ACTT4X-800E

подробное описание детали	isc Triacs

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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isc website：www.iscsemi.com

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isc Triacs

ACTT4X-800E

FEATURES

·

With TO-220F package

·

Suitables for general purpose where high surge current capability is required.

Application such as phase control and tatic switching on inductive or resistive load.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage

800

V

VRRM

Repetitive peak reverse voltage

800

V

IT(RMS)

RMS on-state current (full sine wave)Tj=94℃

4

A

ITSM

Non-repetitive peak on-state current tp=8.3ms

35

A

Tj

Operating junction temperature

-45~125

℃

Tstg

Storage temperature

-45~150

℃

PG(AV)

Average gate power dissipation(Tj=125℃)

0.5

W

Rth(j-c)

Thermal resistance, junction to case

2.05

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM,

VR=VRRM, Tj=125℃

0.01

0.5

mA

IDRM

Repetitive peak off-state current

VD=VDRM,

VD=VDRM, Tj=125℃

0.01

0.5

mA

IGT

Gate trigger current

Ⅰ

VD=12V; RL= 33Ω

10

mA

Ⅱ

10

Ⅲ

10

VGT

Gate trigger voltage all quadrant VD=12V; RL= 33Ω

1

V

VTM

On-state voltage

IT= 6A; tp= 380μs

1.7

V

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