2N6423 datasheet(1/2 Pages) ISC

номер детали	2N6423

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistor

2N6423

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: VCEO=-300V(Min)

·

Minimum Lot-to-Lot variations for robust device

Performance and reliable operation

APPLICATIONS

·

Power amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNI

T

VCBO

Collector-Base Voltage

-500

V

VCEO

Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-2

A

PD

Collector Power Dissipation

@ TC=25℃

35

W

TJ

Junction Temperature

-65~200

℃

Tstg

Storage Temperature Range

-65~200

℃

Аналогичный номер детали - 2N6423

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	2N6423	217Kb / 4P	POWER TRANSISTORS(35W)
Boca Semiconductor Corp...	2N6423	224Kb / 4P	COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
Central Semiconductor C...	2N6423	51Kb / 1P	Power Transistors
New Jersey Semi-Conduct...	2N6423	75Kb / 1P	SI PNP POWER BJT

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Аналогичное описание - 2N6423

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