40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Sou

rce Voltage

± 20

V

54

A

34.1

A

216

A

EAS

76

mJ

IAS

39

A

52

W

Power Dissipation – Derate above 25℃

0.42

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

2.4

℃/W

BVDSS

RDSON

ID

40V

6.5m

Ω

54A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V, 54A, RDS(ON) =6.5m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

 MB / VGA / Vcore

 POL Applications

Thermal Characteristics

PPAK3x3 Pin Configuration

D

S

D

G

S

G

S

S

D D

D

1

5

4

8

2018. 12. 17

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4964Z