LM4953 datasheet(1/5 Pages) LEIDITECH

номер детали	LM4953

подробное описание детали	P-ChannelEnhancement Mode Power MOSFET

PDF	5 Pages

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производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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LM4953

Product Summary

● VDS

-30V

● ID

-5.1A

● RDS(ON)( at VGS=-10V)

＜59 mohm

● RDS(ON)( at VGS=-4.5V)

＜75 mohm

General Description

● Trench Power LV MOSFET technology

● High density cell design for Low RDS(ON)

● High Speed switching

Applications

● Battery protection

● Load switch

● Power management

■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

VDS

-30

V

Gate-source Voltage

VGS

±20

V

Drain Current

TA=25℃ @ Steady State

ID

-5.1

A

TA=70℃ @ Steady State

-4.1

Pulsed Drain Current A

IDM

-20

A

Single Pulse Avalanche Energy

EAS

20

mJ

Total Power Dissipation @ TA=25℃

PD

2.5

W

Thermal Resistance Junction-to-Ambient @ Steady State

RθJA

50

℃/ W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■ Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

LM4953

F2

Q4953

4000

8000

64000

13

“ reel

Enhancement Mode Power MOSFET

P-Channel

Rev :

www.leiditech.com

01.06.2018

1/5

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LM4953 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM4953 датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Аналогичный номер детали - LM4953

Аналогичное описание - LM4953

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