LM4906 datasheet(1/5 Pages) LEIDITECH

номер детали	LM4906

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

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производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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General Description

These N-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast

switching applications.

Features

VDS

40V

ID

(at VGS=10V)

9A

RDS(ON) (at VGS=10V)

7mΩ(Typ)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

TC=25°C

I

D

9

A

TC=100°C

I

D

5.7

A

Maximum Power Dissipation

P

D

1.47

W

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

1.1

℃

/W

Thermal Resistance unction-to-Ambient

R

θJA

62

℃

/W

D D

S G

S S

SOP8

LM4906

Enhancement Mode Power MOSFET

N-Channel

Rev :

www.leiditech.com

01.06.2018

1/5

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LM4906 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Аналогичный номер детали - LM4906

Аналогичное описание - LM4906

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