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LM4012 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

номер детали LM4012
подробное описание детали  N-ChannelEnhancement Mode Power MOSFET
PDF  6 Pages
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производитель  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
домашняя страница  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM4012 датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM4012 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM4012 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM4012 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM4012 Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LM4012 Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd LM4012 Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=40V,ID=12A,RDS(ON)<12mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current – Continuous (TC=25℃ )
12
A
Drain Current – Continuous (TC=100℃ )
8.5
IDM
Drain Current – Pulsed
1
60
PD
Power Dissipation (TC=25℃ )
3
W
Power Dissipation – Derate above 25℃
---
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
---
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
2
41.7
G4
D
D
D
D
S1
S
S
LM4012
Enhancement Mode Power MOSFET
N-Channel
Rev :
www.leiditech.com
01.06.2018
1/6


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