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PDMB100B12C2 датащи(PDF) 2 Page - Nihon Inter Electronics Corporation

номер детали PDMB100B12C2
подробное описание детали  IGBT MODULE Dual 100A 1200V
PDF  3 Pages
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производитель  NIEC [Nihon Inter Electronics Corporation]
домашняя страница  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PDMB100B12C2 датащи(HTML) 2 Page - Nihon Inter Electronics Corporation

  PDMB100B12C2 Datasheet HTML 1Page - Nihon Inter Electronics Corporation PDMB100B12C2 Datasheet HTML 2Page - Nihon Inter Electronics Corporation PDMB100B12C2 Datasheet HTML 3Page - Nihon Inter Electronics Corporation  
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IGBT MODULE Dual 100A 1200V
MODULE Dual 100A 1200V
MODULE Dual 100A 1200V
MODULE Dual 100A 1200V
PDMB100B12C
PDMB100B12C
PDMB100B12C
PDMB100B12C2222
024
68
10
0
50
100
150
200
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25℃
10V
9V
12V
15V
VGE=20V
8V
7V
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25℃
100A
IC=50A
200A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=50A
100A
200A
TC=125℃
0
2
4
6
8
10
12
14
16
0
150
300
450
600
750
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg (nC)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
VCE=600V
400V
200V
RL=6Ω
TC=25℃
0.1
0.2
0.5
1
2
5
10
20
50
100
200
50
100
200
500
1000
2000
5000
10000
20000
50000
Collector to Emitter Voltage VCE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25℃
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Collector Current IC (A)
Fig.6- Collector Current vs. Switching Time (Typical)
tOFF
tf
tr
tON
VCC=600V
RG=10Ω
VGE=±15V
TC=25℃



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