LE405E datasheet(2/3 Pages) LEIDITECH

2 / 3 page

Electrical Characteristics(TA=25°C unless otherwise specified)

Rev : 01.06.2014

2/3

www.leiditech.com

Symbol

Parameter

Test Conditions

Min.

Typ

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=-250uA

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

μA

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250uA

-1

-1.4

-3

BVGSO

Gate-Source Breakdown Voltage VDS=0V, IG=±250uA

±20

IGSS

Gate Leakage Current

VDS=0V, VGS=±25V

100

RDS(on)

Drain-Source On-Resistance

VGS=-10V, ID=-4A

mΩ

VGS=-4.5V, ID=-3A

VSD

Diode Forward Voltage

ISD=-1A,VGS=0V

-1.2

Maximum Body-Diode Continuous Current

-2

Dynamic Parameters

Ciss

Input Capacitance

VGS=0V, VDS=-15V,

f=1MHz

980

Coss

Output Capacitance

360

Crss

Reverse Transfer Capacitance

146

Gate Resistance

VGS=0V, VDS=0V,

f=1MHz

Switching Parameters

Total Gate Charge

ID=-4A, VDS=-15V,

VGS=-10V

Qgs

Gate Source Charge

2.5

Qgd

Gate Drain Charge

2.9

tD(on)

Turn-On DelayTime

VGS=-4.5V, VDD=-15V,

RG=6Ω

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

Turn-Off Fall Time

trr

Body Diode Reverse Recovery

Time

IF=-4A, dI/dt=100A/μs

Qrr

Body Diode Reverse Recovery

Charge

IF=-4A, dI/dt=100A/μs

A: The value of RθJA is measured in a still air environment with T A =25°C. The value in any given application depends on the user's

specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: Pulse test: pulse width ≦ 300ns, duty cycle ≦ 2%.

D: Guaranteed by design, not subject to production testing.

LE405E

LE405E датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LE405E датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3

датащи скачать

ссылки URL