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LCE6005AS датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE6005AS датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 6 page ![]() Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.5 V RDS(ON) VGS=10V, ID=5A - 26 35 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=5A - 32 45 mΩ Forward Transconductance gFS VDS=5V,ID=5A 11 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 979 - PF Output Capacitance Coss - 120 - PF Reverse Transfer Capacitance Crss VDS=30V,VGS=0V, F=1.0MHz - 100 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 5.2 - nS Turn-on Rise Time tr - 3 - nS Turn-Off Delay Time td(off) - 17 - nS Turn-Off Fall Time tf VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω - 2.5 - nS Total Gate Charge Qg - 22 nC Gate-Source Charge Qgs - 3.3 nC Gate-Drain Charge Qgd VDS=30V,ID=5A, VGS=10V - 5.2 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=5A - 1.2 V Diode Forward Current (Note 2) IS - - 5 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25 ,VDD= ℃ 30V,VG=10V,L=0.5mH,Rg=25Ω LCE6005AS Rev : www.leiditech.com 01.06.2015 2/6 |
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