поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

LCE0110AS датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

номер детали LCE0110AS
подробное описание детали  LCE N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
домашняя страница  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LCE0110AS датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LCE0110AS Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LCE0110AS Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LCE0110AS Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LCE0110AS Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LCE0110AS Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd LCE0110AS Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100
110
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.9
1.3
1.8
V
VGS=10V, ID=10A
-
14
17
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=10A
-
15.2
20
mΩ
Forward Transconductance
gFS
VDS=10V,ID=10A
-
26
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
3000
3835
4200
PF
Output Capacitance
Coss
-
178
-
PF
Reverse Transfer Capacitance
Crss
VDS=50V,VGS=0V,
F=1.0MHz
-
153
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
13
-
nS
Turn-on Rise Time
tr
-
14
-
nS
Turn-Off Delay Time
td(off)
-
25
-
nS
Turn-Off Fall Time
tf
VDD=50V,ID=10A,RL=5Ω,
RG=1Ω,VGS=10V
-
10
-
nS
Total Gate Charge
Qg
-
90
-
nC
Gate-Source Charge
Qgs
-
10
-
nC
Gate-Drain Charge
Qgd
ID=10A,VDD=50V,VGS=10V
-
24
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=10A
-
0.85
1.2
V
Diode Forward Current
(Note 2)
IS
-
-
10
A
Reverse Recovery Time
trr
-
33
nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF = 10A
di/dt = 100A/μs
(Note3)
-
54
nC
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
LCE0110 AS
Rev : 01.06.2014
/6
www.leiditech.com
2



Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com