PD4M440L datasheet(1/4 Pages) NIEC

номер детали	PD4M440L

подробное описание детали	MOSFET MODULE Dual 30A 450V/500V

PDF	4 Pages

Scroll/Zoom	100%

производитель	NIEC [Nihon Inter Electronics Corporation]

домашняя страница	http://www.niec.co.jp

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MOSFET MODULE

MODULE

MODULE Dual 30A 450V/500V

Dual 30A 450V/500V

PD4M441L / PD4M440L

MAXMUM RATINGS

Ratings

Symbol

PD4M441L

PD4M440L

Unit

Drain-Source Voltage (VGS=0V)

VDSS

450

500

V

Gate -Source Voltage

VGSS

+/ - 20

V

Duty=50%

30 (Tc=25

°C)

Continuous Drain Current

D.C.

ID

21 (Tc=25

°C)

A

Pulsed Drain Current

IDM

60 Tc=25

°C)

A

Total PowerDissipation

PD

230 Tc=25

°C)

W

OperatingJunction Temperature Range

Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +125

°C

Isolation Voltage Terminals to Base AC, 1 min.)

VISO

2000

V

Module Base to Heatsink

3.0

MountingTorque

Bus Bar to Main Terminals

FTOR

2.0

N

•m

ELECTRICAL CHARACTERISTICS (@Tc=25°Cunlessotherwisenoted)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

VDS=VDSS,VGS=0V

-

1.0

Zero Gate Voltage Drain Current

IDSS

Tj=125

°C,VDS=VDSS,VGS=0V

-

4.0

mA

Gate-Source ThresholdVoltage

VGS(th)

VDS=VGS, ID=1mA

2.0

3.2

4.0

V

Gate-Source Leakage Current

IGSS

VGS=+/- 20V,VDS=0V

-

1.0

µA

StaticDrain-Source On-Resistance

rDS(on)

VGS=10V, ID=15A

-

190

210

m-ohm

Forward Transconductance

gfs

VDS=15V, ID=15A

-

27

-

S

InputCapacitance

Cies

-

5.2

-

nF

OutputCapacitance

Coss

-

1.1

-

nF

Reverse TransferCapacitance

Crss

VDS=25V,VGS=0V,f=1MHz

-

0.18

-

nF

Turn-On DelayTime

td(on)

-

100

-

Rise Time

tr

-

60

-

Turn-Off Delay Time

td(off)

-

180

-

Fall Time

tf

VDD=1/2VDSS

ID=15A

VGS=-5V, +10V

RG=7ohm

-

50

-

ns

FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Continuous Source Current

IS

D.C.

-

21

A

PulsedSource Current

ISM

-

60

A

Diode ForwardVoltage

VSD

IS=30A

-

2.0

V

Reverse RecoveryTime

trr

-

750

-

ns

Reverse Recovery

Qr

IS=30A, -dis/dt=100A/

µs

-

17

-

µC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

MOSFET

-

0.56

Thermal Resistance, Junction to Case

Rth(j-c)

Diode

-

0.56

Thermal Resistance, Case to Heatsink

Rth(c-f)

Mountingsurface flat, smooth, and greased

-

0.1

°C/W

Dimension(mm)

FEATURES

* Dual MOSFETs Cascaded Circuit

* LowOn-Resistance andSwitching

Dissipation

TYPICAL APPLICATIONS

* PowerSupplyforthe Communications and

the Induction Heating

Approximate Weight:220g

OUTLINE DRAWING

Circuit

108.0

Аналогичный номер детали - PD4M440L

производитель	номер детали	датащи	подробное описание детали
Nihon Inter Electronics...	PD4M440L	119Kb / 3P	30A 450~500V
Kyocera Kinseki Corpota...	PD4M440L	478Kb / 3P	MOSFET
Nihon Inter Electronics...	PD4M440L	119Kb / 3P	30A 450~500V
National Instruments Co...	PD4M440L	119Kb / 3P	30A 450節?00V

More results

Аналогичное описание - PD4M440L

производитель	номер детали	датащи	подробное описание детали
Nihon Inter Electronics...	PD4M440H	64Kb / 3P	MOSFET MODULE Dual 30A 450/500V
	PD10M440H	67Kb / 3P	MOSFET MODULE DUAL 85A 450V/500V
	PDM1405HA	70Kb / 3P	MOSFET MODULE Dual 140A/500V
	PD7M440H	66Kb / 3P	MOSFET MODULE Dual 50A 450V/500V
	PD7M440L	128Kb / 4P	MOSFET MODULE Dual 50A 450V/550V
	PD10M440L	130Kb / 4P	MOSFET MODULE Dual 70A 450V/500V
	PDM505HA	67Kb / 3P	MOSFET MODULE Dual 50A/500V
	PDM505HC	113Kb / 3P	MOSFET MODULE Dual 50A/500V
Fairchild Semiconductor	FGPF30N45T	538Kb / 7P	450V, 30A PDP Trench IGBT
Nihon Inter Electronics...	PD4M440H	117Kb / 3P	MOSFET 30A 450~500V

More results

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