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BC107B датащи(PDF) 2 Page - Silicon Supplies

номер детали BC107B
подробное описание детали  NPN Transistor Bare Die
PDF  4 Pages
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производитель  SS [Silicon Supplies]
домашняя страница  https://siliconsupplies.com/
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BC107B датащи(HTML) 2 Page - Silicon Supplies

  BC107B Datasheet HTML 1Page - Silicon Supplies BC107B Datasheet HTML 2Page - Silicon Supplies BC107B Datasheet HTML 3Page - Silicon Supplies BC107B Datasheet HTML 4Page - Silicon Supplies  
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PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
50
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, IB = 0
45
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
6
-
-
V
Collector Cut-off Current
ICBO
VCB = 40V, IE = 0
-
-
15
nA
ON CHARACTERISTICS
VCE = 5V, IC = 2mA
200
230
450
-
Forward-Current Transfer Ratio
1
hFE
VCE = 5V, IC = 10µA
40
150
-
-
IC = 10mA, IB = 0.5mA
-
70
250
mV
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 5mA
-
200
600
mV
IC = 10mA, IB = 0.5mA
-
700
830
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC = 100mA, IB = 5mA
-
950
1050
mV
IC = 2mA, VCE = 5V
550
650
700
mV
Base-Emitter On Voltage
VBE(on)
IC = 10mA, VCE = 5V
-
-
770
mV
SMALL SIGNAL CHARACTERISTICS
2
Transition Frequency
3
fT
VCE = 5V, IC = 10mA, f = 100MHz
150
300
-
MHz
Small-Signal Current Gain
hfe
VCE= 5V, IC = 2mA,
f = 1 kHz
240
330
500
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
-
2.5
4.5
pF
Input Capacitance
Cibo
VBE = 10V, IC = 0, f = 1MHz
-
9
-
pF
Noise Figure
NF
VCE = 5V, IC = 200µA,
f = 1KHz, RG=2KΩ
-
2
10
dB
Electrical Characteristics T
A = 25°C unless otherwise stated
Absolute Maximum Ratings T
A = 25°C unless otherwise stated
Rev 1.0
08/01/19
NPN Transistor Bare Die – BC107B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55 to 150
°C
Note 1: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%
Note 2: Not production testing in die form. Characterized by chip design and tested in package
Note 3: fT is defined as the frequency at which |hfe| extrapolates to unity.
Page 2 of 4
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