NTMFS034N15MC

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2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Note 2)

2.0

°C/W

Junction−to−Ambient − Steady State (Notes 1, 2)

50

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

150

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

86

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.5

4.5

V

Negative Threshold Temperature Coefficient

−7.7

mV/°C

Drain−to−Source On Resistance

25

31

mW

Drain−to−Source On Resistance

27

36.5

mW

Forward Transconductance

27

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

905

pF

Output Capacitance

270

Reverse Transfer Capacitance

5

Gate−Resistance

0.6

1.2

W

Total Gate Charge

12

nC

Threshold Gate Charge

3.1

Gate−to−Source Charge

4.8

Gate−to−Drain Charge

1.8

Plateau Voltage

5.4

V

Output Charge

32

nC

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

12

ns

Rise Time

2.2

Turn−Off Delay Time

14

Fall Time

2.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.87

1.2

V

Reverse Recovery Time

41

ns

Reverse Recovery Charge

126

nC

Reverse Recovery Time

22

ns

Reverse Recovery Charge

164

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.