MSC010SDA070S

Zero Recovery Silicon Carbide Schottky Diode

Product Overview

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications.

The MSC010SDA070S device is a 700 V, 10 A SiC SBD in a TO-268 (D3PAK) package.

Features

The following are key features of the MSC010SDA070S device:

• No reverse recovery

• Low forward voltage

• Low leakage current

• Avalanche-energy rated

• RoHS compliant

Benefits

The following are benefits of the MSC010SDA070S device:

• High switching frequency

• Low switching losses

• Low noise (EMI) switching

• Higher reliability systems

• Increased system power density

Applications

The MSC010SDA070S device is designed for the following applications:

• Power factor correction (PFC)

• Anti-parallel diode

– Switch-mode power supply

– Inverters/converters

– Motor controllers

• Freewheeling diode

– Switch-mode power supply

– Inverters/converters

• Snubber/clamp diode

Datasheet

DS-00003841A-page 1