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FTK4060K датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK4060K
подробное описание детали  N-Channel Power MOSFET
PDF  4 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4060K датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK4060K Datasheet HTML 1Page - First Silicon Co., Ltd FTK4060K Datasheet HTML 2Page - First Silicon Co., Ltd FTK4060K Datasheet HTML 3Page - First Silicon Co., Ltd FTK4060K Datasheet HTML 4Page - First Silicon Co., Ltd  
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2017. 10. 10
2/4
FTK4060K
Revision No : 0
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
(BR) DSS
VGS = 0V, ID =250µA
40
V
Zero gate voltage drain current
DSS
VDS =40V, VGS =0V
1
µA
Gate-body leakage current
GSS
VDS =0V, VGS =±20V
±100
nA
On characteristics (note1)
V
e
g
a
t
l
o
v
d
l
o
h
s
e
r
h
e-t
t
a
G
GS(th)
VDS =VGS, ID =250µA
1.2
2.5
V
VGS =10V, ID=20A
13
mΩ
Static drain-source on-sate resistance
DS(on)
VGS =4.5V, ID=20A
20
mΩ
g
e
c
n
a
t
c
u
d
n
o
c
s
n
a
r
t
d
r
a
w
r
o
F
FS
VDS =10V, ID =20A
15
S
Dynamic characteristics (note 2)
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
n
I
iss
1800
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
t
u
O
oss
280
Reverse transfer capacitance
rss
VDS =20V,VGS =0V,
f =1MHz
190
pF
Switching characteristics (note 2)
Q
e
g
r
a
h
c
e
t
a
g
l
a
t
o
T
g
29
Q
e
g
r
a
h
c
e
c
r
u
o
s
-
e
t
a
G
gs
4.5
Q
e
g
r
a
h
c
n
i
a
r
d
-
e
t
a
G
gd
VDS=20V, VGS=10V,
ID=20A
6.4
nC
t
e
m
i
t
y
a
l
e
d
n
o
-
n
r
u
T
d(on)
6.4
t
e
m
i
t
e
s
i
r
n
o
-
n
r
u
T
r
17.2
t
e
m
i
t
y
a
l
e
d
f
f
o
-
n
r
u
T
d(off)
29.6
t
e
m
i
t
ll
a
f
f
f
o
-
n
r
u
T
f
VDD=20V,ID=2A,
VGS=10V,RG=3Ω,
RL=1Ω
16.8
ns
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
SD
VGS =0V, IS=10A
1.2
V
Continuous drain-source diode forward
current
IS
60
A
Pulsed drain-source diode forward current
SM
240
A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
V
I
I
R
C
V
I
45
1.6
7.3



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