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FTK3907Z датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK3907Z
подробное описание детали  Suit for -4.5V Gate Drive Applications
PDF  5 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3907Z датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK3907Z Datasheet HTML 1Page - First Silicon Co., Ltd FTK3907Z Datasheet HTML 2Page - First Silicon Co., Ltd FTK3907Z Datasheet HTML 3Page - First Silicon Co., Ltd FTK3907Z Datasheet HTML 4Page - First Silicon Co., Ltd FTK3907Z Datasheet HTML 5Page - First Silicon Co., Ltd  
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2017.5. 10
2/5
FTK3907Z
Revision No : 0
Electrical Characteristics (TJ=25℃)
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=
-1mA
---
-0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=
-27V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-24V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-8A
---
14.5
18
mΩ
VGS=
-4.5V , ID=-6A
---
23
30
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =
-250uA
-1.2
-1.6
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4
---
mV/℃
gfs
Forward Transconductance
VDS=
-10V , ID=-8A
---
6.8
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=
-15V , VGS=-4.5V , ID=-5A
---
11
17
nC
Qgs
Gate-Source Charge2 , 3
---
3.4
6
Qgd
Gate-Drain Charge2 , 3
---
4.2
8
Td(on)
Turn-On Delay Time2 , 3
VDD=
-15V , VGS=-10V , RG=6Ω
ID=
-1A
---
5.8
11
ns
Tr
Rise Time2 , 3
---
18.8
36
Td(off)
Turn-Off Delay Time2 , 3
---
46.9
90
Tf
Fall Time2 , 3
---
12.3
23
Ciss
Input Capacitance
VDS=
-15V , VGS=0V , F=1MHz
---
1250
2500
pF
Coss
Output Capacitance
---
160
320
Crss
Reverse Transfer Capacitance
---
90
180
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-30
A
ISM
Pulsed Source Current
---
---
-60
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≤300us , duty cycle ≤2%.
3.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings



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