FTK2007DFN23 datasheet(1/4 Pages) FS

номер детали	FTK2007DFN23

подробное описание детали	Dual N-Channel MOSFET

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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2015. 03. 10

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SEMICONDUCTOR

TECHNICAL DATA

FTK2007DFN23

Revision No : 0

Dual N-Channel MOSFET

DESCRIPTION

The FTK2007DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge.

It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated

by its common-drain configuration.

MARKING:

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Para

l

o

b

m

y

S

r

e

t

e

m

Value

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID

7

A

Pulsed Drain Current

IDM *

30

A

Thermal Resistance from Junction to Ambient

RθJA

125

℃/W

Junction Temperature

Tj

0

5

1

℃

Storage Temperature

Tstg

-55~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

TL

260

℃

*Repetitive rating：Pluse width limited by junction temperature.

DFNWB2×

3-6L-C

V(BR)DSS

RDS(on)MAX

ID

20V

20mΩ@10V

7A

22mΩ@4.5V

24mΩ@3.8V

Equivalent Circuit

26mΩ@2.5V

35mΩ@1.8V

Аналогичный номер детали - FTK2007DFN23

производитель	номер детали	датащи	подробное описание детали
Fluke Corporation	FTK2000	696Kb / 11P	SimpliFiber® Pro Rev: 01/02/2018
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First Silicon Co., Ltd	FTK2005DFN23	824Kb / 4P	Dual N-Channel MOSFET

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Аналогичное описание - FTK2007DFN23

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Аналогичный номер детали - FTK2007DFN23

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