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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FTK640F датащи(PDF) 5 Page - First Silicon Co., Ltd |
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FTK640F датащи(HTML) 5 Page - First Silicon Co., Ltd |
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5 / 7 page  2014. 3. 10 5/7 Revision No : 0 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 1.25 1.05 0.95 0.85 0.75 -60 -40 -20 0 20 40 60 TJ, JUNCTION TEMPERATURE (oC) 100 120 140 160 1.15 80 ID = 250µA 3000 600 0 1 10 100 1800 VDS, DRAIN TO SOURCE VOLTAGE (V) 2400 1200 CISS COSS CRSS CISS = CGS + CGD CRSS = CGD COSS ≈CDS + CGD VGS = 0V, f = 1MHz 25oC ID, DRAIN CURRENT (A) 0 0 6 12 18 24 3 6 9 12 15 30 150oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0 0.8 1.2 1.6 2.0 0.4 1 10 100 VSD, SOURCE TO DRAIN VOLTAGE (V) 1000 25oC 150oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX Qg, GATE CHARGE (nC) 0 0 15 30 45 60 4 8 12 16 20 75 ID = 28A VDS = 100V VDS = 160V VDS = 40V FTK640D/DD/P/F |
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