ABSOLUTE MAXIMUM RATINGS

˚C, unless otherwise specified)

PARAMET

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

˚C ~ 125˚C)

200

V

= 20kΩ, T

˚C ~ 125˚C)

200

V

Gate to Source Voltage

±20

V

Continuous

18

A

Drain Current

11

72

A

W

Derating factor

W/

˚C

Single Pulse Avalanche Energy Rating

˚C, L = 3.3mH, R

G

=25Ω, I

580

Note: 1. Signified recommend operating range that indicates conditions for which the device is intended to be

functional, but does not guarantee specific performance limits.

2. Absolute maximum ratings indicate limits beyond which damage to the device may occur.

ELECTRICAL SPECIFICATIONS

˚C , unless Otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

200

V

Drain-Source Breakdown Voltage

4.0

µA

Gate to Threshold Voltage

On-State Drain Current (Note 1)

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

1

V

Drain to Source On Resistance

(Note 1)

10

Ω

Forward Transconductance

(Note 1)

pF

Turn-On Delay Time

pF

Rise Time

≈ 19.4A,

= 25Ω,

2014. 3. 10

2/7

Revision No : 0

-40 ~ +150

˚C

MAX

Storage Temperature Range

Turn-Off Delay Time

ns

Fall Time

Gate to Source Charge

8.6

nC

Gate to Drain “Miller” Charge

13.5

nC

Total Gate Charge

Input Capacitance

1220

nC

0.125

31

-40 ~ +150

˚C

Operating Temperature Range

Pulsed

mJ

A

Output Capacitance

Reverse - Transfer Capacitance

˚C

2.0

30

220

±100

0.15

50

390

170

120

40

µA

nA

ns

ns

pF

ns

Note: 1. Pulse Test: Pulse width

≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.

20

190

55

80

1600

290

40

125 / 40

1.0 / 0.32

6.7

10

S

10V

(FTK640P / FTK640F)

18

A

FTK640D/DD/P/F