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FTK2P7002S датащи(PDF) 2 Page - First Silicon Co., Ltd |
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FTK2P7002S датащи(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA -60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=125℃ --- --- 30 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 10 uA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=0.3A --- 2.3 4 Ω VGS=4.5V , ID=0.2A --- 2.9 5 Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA -1 -1.5 -2 V △ VGS(th) VGS(th) Temperature Coefficient --- -2.1 --- mV/℃ Dynamic and switching Characteristics Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 41 --- pF Coss Output Capacitance --- 13 --- Crss Reverse Transfer Capacitance --- 8 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -0.3 A ISM Pulsed Source Current --- --- -0.6 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- -1.3 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings 2019. 05. 02 2/5 Revision No : 0 FTK2P7002S |
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