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C3M0120065J датащи(PDF) 4 Page - Cree, Inc

номер детали C3M0120065J
подробное описание детали  Silicon Carbide Power MOSFET C3MTM MOSFET Technology
PDF  11 Pages
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производитель  CREE [Cree, Inc]
домашняя страница  http://www.cree.com/
Logo CREE - Cree, Inc

C3M0120065J датащи(HTML) 4 Page - Cree, Inc

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C3M0120065J Rev. 1, 01-2021
Figure 2. Output Characteristics TJ = 25 ºC
Typical Performance
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 1. Output Characteristics TJ = -40 ºC
Figure 3. Output Characteristics TJ = 175 ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
Junction Temperature, Tj (°C)
Conditions:
IDS = 6.8 A
VGS = 15 V
tp < 200 µs
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
40
45
Drain-Source Current, IDS (A)
Conditions:
VGS = 15 V
tp < 200 µs
Tj = 175 °C
Tj = -40 °C
Tj = 25 °C
Figure 4. Normalized On-Resistance vs. Temperature
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
175
Junction Temperature, Tj (°C)
Conditions:
IDS = 6.8 A
tp < 200 µs
VGS = 15 V
VGS = 13 V
VGS = 11 V
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
0
5
10
15
20
25
30
35
40
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, VDS (V)
Conditions:
Tj = 175 °C
tp = < 200 µs
VGS = 7V
VGS = 13V
VGS = 11V
VGS = 9V
VGS = 15V
0
5
10
15
20
25
30
35
40
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, VDS (V)
Conditions:
Tj = 25 °C
tp = < 200 µs
VGS = 7V
VGS = 13V
VGS = 11V
VGS = 9V
VGS = 15V
0
5
10
15
20
25
30
35
40
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, VDS (V)
Conditions:
Tj = -40 °C
tp = < 200 µs
VGS = 7V
VGS = 13V
VGS = 11V
VGS = 9V
VGS = 15V



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