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TSZ182IST датащи(PDF) 8 Page - STMicroelectronics |
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TSZ182IST датащи(HTML) 8 Page - STMicroelectronics |
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8 / 43 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit Cs Channel separation f = 100 Hz 135 dB tinit Initialization time, G = 100 (5) T = 25 °C 60 µs -40 °C < T< 125 °C 100 1. See Section 5.5 Input offset voltage drift over temperature. Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature. 2. Guaranteed by design 3. Tested on the MiniSO8 package, RF injection on the IN- pin 4. Slew rate value is calculated as the average between positive and negative slew rates 5. Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage stabilization TSZ181, TSZ182 Electrical characteristics DS11863 - Rev 5 page 8/43 |
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