FTK2501DFN22 datasheet(2/5 Pages) FS

номер детали	FTK2501DFN22

подробное описание детали	20V P-Channel Enhancement-Mode MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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2 / 5 page

2017. 3. 18

2/5

Revision No : 0

FTK2501DFN2020

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Limit

Min Typ

Max

Unit

STATIC

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μ A

-20

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μ A

-0.4

-0.6

-1

IGSS

Gate Leakage Current

VDS=0V, VGS=±8V

±100

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V

-1

VGS=-4.5V, ID= -2.8A

110

RDS(ON)

Drain-Source On-Resistance a

VGS=-2.5V, ID= -2.0A

110

150

mΩ

VSD

Diode Forward Voltage

IS=-1A, VGS=0V

-0.7

-1.4

DYNAMIC

Total Gate Charge

7.2

Qgs

Gate-Source Charge

2.2

Qgd

Gate-Drain Charge

VDS=-6V, VGS=-4.5V,

ID=-2.8A

1.2

Gate resistance

VDS=0V, VGS=0V, f=1MHz

7.5

Ω

Ciss

Input Capacitance

480

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS=-15V, VGS=0V,

f=1MHz

td(on)

Turn-On Delay Time

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall time

VDS=-6V, RL =6Ω

RGEN=6Ω , VGS=-4.5V

Notes: a. Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%

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