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NLAS3799 датащи(PDF) 1 Page - ON Semiconductor |
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NLAS3799 датащи(HTML) 1 Page - ON Semiconductor |
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1 / 11 page ![]() © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 0 1 Publication Order Number: NLAS3799/D NLAS3799, NLAS3799L Dual DPDT Ultra−Low RON Switch The NLAS3799 is an ultra−low RON DPDT and a 0.5 W RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output and earpiece for cellphone applications. It can switch a balanced stereo output. The NLAS3799 can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−before−make (BBM) feature. Features • Single Supply Operation 1.65 to 3.6 V VCC • Maximum Breakdown Voltage: 4.6 V • Low Static Power • NLAS3799 Interfaces with 2.8 V Chipset NLAS3799L Interfaces with 1.8 V Chipset • These are Pb−Free Devices* Typical Applications • Cell Phone Speaker/Microphone Switching • Ringtone−Chip/Amplifier Switching • Four Unbalanced (Single−Ended) Switches • Stereo Balanced (Push−Pull) Switching Important Information • ESD Protection: HBM (Human Body Model) > 8000 V MM (Machine Model) > 400 V • Continuous Current Rating Through each Switch ±300 mA • Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 • Package: 1.8 x 2.6 x 0.75 mm mQFN−16 Pb−Free *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mQFN−16 CASE 488AP MARKING DIAGRAMS See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. ORDERING INFORMATION 16 XXM G 1 XX = Specific Device Code AR = NLAS3799 AT = NLAS3799L M = Date Code/Aseembly Location G = Pb−Free Package http://onsemi.com 4 1 16 13 9 12 58 14 7 15 6 310 211 COMA NOA Vcc NCD NCB GND NOCCOMC NCC C−D IN NOD COMD COMB NOB A−B IN NCA 1 |
Аналогичный номер детали - NLAS3799 |
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Аналогичное описание - NLAS3799 |
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