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T1050-8G датащи(PDF) 5 Page - STMicroelectronics |
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T1050-8G датащи(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C] Tj (°C) IH and IL IGT Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) 0.1 1.0 10.0 100.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dl/dt)c [(dV/dt)c / specified (dl/dt)c (dV/dt)c (V/µs) B C BW/CW/T10xx Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature 0 25 50 75 100 125 0 1 2 3 4 5 6 (dl/dt)c [Tj] / (dl/dt)c [Tj = 125 °C] Tj(°C) Figure 11. D²PAK thermal resistance junction to ambient versus copper surface under tab 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 Rth(j-a) (°C/W) D²PAK Epoxy printed board FR4, copper thickness = 35 µm SCu(cm²) BTA10, BTB10, T1035, T1050 Characteristics (curves) DS3165 - Rev 9 page 5/12 |
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