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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MB1S датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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MB1S датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page  MB1S~MB10S Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Surge Current Capability ● Designed for Surface Mount Application ● Plastic Material – UL Flammability 94V-O Mechanical Date ● Case:MBS, Molded Plastic ● Terminals: Plated Leads Solderable per Major Ratings and Characteristics MIL STD 202 Method 208 I 05A 0 8A MIL-STD-202, Method 208 ● Polarity: As Marked on Case ● Mounting Position: Any ● Marking:Type Number ● Lead Free: For RoHS / Lead Free Version IO 0.5A, 0.8A VRRM 100 V to 1000 V IFSM 30 A IR 5 μA VF 1.00V Tj max. 150 °C Maximum Ratings & Thermal Characteristics (T A = 25 °C unless otherwise noted) Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. MB 6S MB 8S MB 10S UNIT Symbol MB 1S MB 2S MB 4S 600 Items 800 1000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM VRWM 100 200 400 VR(RMS) 70 140 280 DC Blocking Voltage RMS Reverse Voltage VR 30 420 560 700 V IO A Average Rectified Output Current (1) Average Rectified Output Current (2) 0.5 0.8 IFSM A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Note 1: Mounted on glass epoxy PC board with 1.0mm 2 solder pad. Note 2: Mounted on aluminum substrate PC board with 1.0mm 2 solder pad. Thermal resistance from junction to ambient (1) 3.7 20 134 RθJL ℃ / W I 2tA2s I 2t Rating for Fusing (t < 8.3ms) Thermal resistance from junction to lead TJ, TSTG ℃ Operating junction and storage temperature range –55 to +150 Thermal resistance from junction to ambient (2) 76 RθJA ℃ / W p Electrical Characteristics (TA = 25 °C unless otherwise noted) Note: 3.Pulse test:300μs pulse width,1% duty cycle. UNIT Instantaneous forward voltage IF=0.4A (3) VF - - 1.00 V Items Test conditions Symbol Min Type Max 5 μA Tj=125℃ - - 500 Reverse current VR=VDC Tj=25℃ IR -- p F Typical junction capacitance 4.0 V ,1MHz CJ -13- Schottky Mount glass Passivatd Bridge Rectifier Rev : www.leiditech.com 01.06.2015 1/3 |
Аналогичный номер детали - MB1S |
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Аналогичное описание - MB1S |
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