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CS48N75 датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали CS48N75
подробное описание детали  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

CS48N75 датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
70
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=68V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±25V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=70A
---
7
8.4
mΩ
GFS
Forward Transconductance
VDS=10V, ID=15A
18
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
2860
---
pF
Coss
Output Capacitance
---
281
---
Crss
Reverse Transfer Capacitance
---
265
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=30V, ID=2A,
RGEN=15Ω.VGS=10V
---
18
---
ns
tr
Rise Time
---
29
---
ns
td(off)
Turn-Off Delay Time
---
55
---
ns
tf
Fall Time
---
27
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=50V,
ID=40A
---
77
---
nC
Qgs
Gate-Source
Charge
---
15.7
---
nC
Qgd
Gate-Drain “Miller” Charge
---
35.2
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
1
VGS=0V,IS=40A
---
0.89
0.99
V
Ls
Diode Forward Current
---
---
---
68
A
CS48N75
Electrical Characteristics：(T
C=25℃ unless otherwise noted)



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