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STM32MP157C датащи(PDF) 156 Page - STMicroelectronics |
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STM32MP157C датащи(HTML) 156 Page - STMicroelectronics |
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156 / 260 page ![]() Electrical characteristics STM32MP157C/F 156/260 DS12505 Rev 5 4 MHz low-power internal RC oscillator (CSI) 32 kHz low-speed internal (LSI) RC oscillator 6.3.11 PLL characteristics The parameters given in Table 39, Table 40, Table 41, Table 42 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 13: General operating conditions. Table 37. CSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fCSI(2) CSI frequency VDD = 3.3 V, TJ = 30 °C 3.98 4 4.02 MHz TRIM Trimming step Trimming code is not a multiple of 16 -0.85 1 % Trimming code is a multiple of 16 - -1.65 - - DuCy(CSI) Duty Cycle - 45 - 55 % ∆VDD (CSI) + ∆TEMP (CSI)(3) CSI oscillator frequency drift over VDD & drift over temperature VDD = 1.71 to 3.6 V TJ = 0 to 85 °C - ±1.43 - % tsu(CSI) CSI oscillator startup time - - 1.5 2.4 µs tstab(CSI) CSI oscillator stabilization time (to reach ±5% of fCSI) TJ = 0 to 85 °C - 5 - cycle IDD(CSI) CSI oscillator power consumption - - 30 - µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization results. Table 38. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency TJ = 30 °C,(2) VDD = 3.3 V 31.4 32 32.6 kHz TJ = -40 to 125 °C, VDD = 1.71 to 3.6 V 29 32 33.6 tsu(LSI) LSI oscillator startup time (Time between Enable rising and First output clock edge.) - - 64 125 µs tstab(LSI) LSI oscillator stabilization time (5% of final value) -- 110 170 IDD(LSI) LSI oscillator power consumption - - 120 230 nA 1. Guaranteed by design. 2. Guaranteed by test in production. |
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