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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L412C8 датащи(PDF) 90 Page - STMicroelectronics |
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STM32L412C8 датащи(HTML) 90 Page - STMicroelectronics |
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90 / 192 page  Table 30. Current consumption in Run, code with data processing running from SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V) Symbol Parameter Conditions(1) TYP Unit -fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C IDD_ALL(Run) Supply current in Run mode fHCLK = fHSE up to 48MHz included, bypass mode PLL ON above 48 MHz all peripherals disable 80 MHz 2.57 2.59 2.61 2.68 2.71 mA 72 MHz 2.32 2.34 2.35 2.43 2.46 64 MHz 2.07 2.08 2.10 2.17 2.21 48 MHz 1.55 1.56 1.58 1.62 1.69 32 MHz 1.06 1.06 1.08 1.11 1.19 24 MHz 0.81 0.81 0.83 0.86 0.93 16 MHz 0.56 0.56 0.58 0.61 0.67 8 MHz 0.25 0.26 0.28 0.30 0.36 4 MHz 0.15 0.15 0.17 0.20 0.25 2 MHz 9.53 0.10 0.12 0.15 0.20 1 MHz 0.07 0.07 0.09 0.14 0.17 100 kHz 0.01 0.01 0.03 0.06 0.12 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V |
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