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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S003F3 датащи(PDF) 63 Page - STMicroelectronics |
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STM8S003F3 датащи(HTML) 63 Page - STMicroelectronics |
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63 / 103 page  DS7147 Rev 10 63/103 STM8S003F3 STM8S003K3 Electrical characteristics 87 HSE oscillator critical gm formula Rm: Notional resistance (see crystal specification) Lm: Notional inductance (see crystal specification) Cm: Notional capacitance (see crystal specification) Co: Shunt capacitance (see crystal specification) CL1=CL2=C: Grounded external capacitance gm >> gmcrit 9.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) gmcrit 2 Π × fHSE × ()2 Rm × 2Co C + () 2 = Table 34. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI Accuracy of HSI oscillator User-trimmed with the CLK_HSITRIMR register for given VDD and TA conditions(1) 1. See the application note. -- 1.0(2) % Accuracy of HSI oscillator (factory calibrated) VDD = 5 V, -40 °C ≤ TA ≤ 85 °C -5 - 5 tsu(HSI) HSI oscillator wakeup time including calibration - - - 1.0(2) 2. Guaranteed by design. µs IDD(HSI) HSI oscillator power consumption - - 170 250(3) 3. Data based on characterization results. µA |
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