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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BUP49 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUP49 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BUP49 DESCRIPTION · Large collector current · Low collector saturation voltage · High power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter · Driver of solenoid or motor · For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.58 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 90 A PC Collector Power Dissipation 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature -55~200 ℃ |
Аналогичный номер детали - BUP49 |
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Аналогичное описание - BUP49 |
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