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SCTL35N65G2V датащи(PDF) 3 Page - STMicroelectronics

номер детали SCTL35N65G2V
подробное описание детали  Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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SCTL35N65G2V датащи(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 3. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
650
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V
5
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 22 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
1.8
3.2
5.0
V
RDS(on)
Static drain-source on-resistance
VGS = 20 V, ID = 20 A
45
67
mΩ
VGS = 18 V, ID = 20 A
55
VGS = 20 V, ID = 20 A, TJ = 175 °C
58
Table 4. Dynamic, based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS = 0 V, VDS = 400 V, f = 1 MHz
-
1370
-
pF
Coss
Output capacitance
-
125
-
pF
Crss
Reverse transfer capacitance
-
30
-
pF
Rg
Gate input resistance
f = 1 MHz, ID = 0 A
-
2
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 20 A, VGS = 0 to 20 V
-
73
-
nC
Qgs
Gate-source charge
-
14
-
nC
Qgd
Gate-drain charge
-
27
-
nC
Table 5. Switching energy (inductive load), based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Turn-on switching energy
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = -5 to 20 V
-
100
-
µJ
Eoff
Turn-off switching energy
-
35
-
µJ
Table 6. Switching times, based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = -5 to 20 V
-
16
-
ns
tf
Fall time
-
14
-
ns
td(off)
Turn-off delay time
-
35
-
ns
tr
Rise time
-
9
-
ns
SCTL35N65G2V
Electrical characteristics
DS13474 - Rev 1
page 3/14



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