C10T03QLH datasheet(1/6 Pages) NIEC

номер детали	C10T03QLH

подробное описание детали	Schottky Barrier Diode

PDF	6 Pages

Scroll/Zoom	100%

производитель	NIEC [Nihon Inter Electronics Corporation]

домашняя страница	http://www.niec.co.jp

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1 / 6 page

SBD

SBD Type : C10T03QLH

C10T03QLH

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight: 1.4g

Rating

Symbol

C10T03QLH

Unit

Repetitive Peak Reverse Voltage

VRRM

30

V

Repetitive Peak Surge Reverse Voltage

VRRSM

35(pulse width

≤ 1µs

duty

≤ 1/50)

V

Average Rectified Output Current

IO

10

Tc=129

°C

50 Hz Full Sine Wave

Resistive Load

A

RMS Forward Current

IF(RMS)

11.1

A

Surge Forward Current

IFSM

120

50Hz Full Sine Wave ,1cycle

Non-repetitive

A

Operating JunctionTemperature Range

Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +150

°C

Electrical

• Thermal Characteristics

Characteristics

Symbol

Conditions

Min.

Typ.

Max.

Unit

Peak Reverse Current

IRM

Tj= 25

°C, VRM= VRRM

per arm

-

1

mA

Peak Forward Voltage

VFM

Tj= 25

°C, IFM= 5 A

per arm

-

0.57

V

Thermal Resistance

Rth(j-c) Junction to Case

-

3

°C /W

FEATURES

*SQUARE-PAK TO-263AB(SMD)

Packaged in 24mm Tape and Reel

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*High Surge Capability

*Tj=150

°C operation

Аналогичный номер детали - C10T03QLH

производитель	номер детали	датащи	подробное описание детали
National Instruments Co...	C10T03QLH	138Kb / 1P	SBD
Nihon Inter Electronics...	C10T03QLH-11A	54Kb / 6P	Schottky Barrier Diode
National Instruments Co...	C10T03QLH-11A	139Kb / 1P	SBD
	C10T03QLH-11A_2015	139Kb / 1P	SBD
	C10T03QLH	138Kb / 1P	SBD

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Аналогичное описание - C10T03QLH

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C10T03QLH датащи(PDF) 1 Page - Nihon Inter Electronics Corporation

C10T03QLH датащи(HTML) 1 Page - Nihon Inter Electronics Corporation

Аналогичный номер детали - C10T03QLH

Аналогичное описание - C10T03QLH

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