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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FTK2210DFN22 датащи(PDF) 2 Page - First Silicon Co., Ltd |
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FTK2210DFN22 датащи(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 11 page  Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 12 V VGSS Gate-Source Voltage ±8 TJ Maximum Junction Temperature 150 ℃ TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TA=25℃ 1.2 A ID Continuous Drain Current TA=25℃ 12 a A TA=70℃ 11.4 IDM b Pulsed Drain Current TA=25℃ 36 A PD c Maximum Power Dissipation TA=25℃ 1.32 W TA=70℃ 0.8 RθJA c Thermal Resistance-Junction to Ambient t ≤10s 70 ℃ /W Steady State 95 ℃ /W IAS d Avalanche Current, Single pulse L=0.1mH 24 A EAS d Avalanche Energy, Single pulse L=0.1mH 29 mJ Note a Current limited by bonding wire. Note b Pulse width limited by max. junction temperature. Note c RθJA steady state t=999s. Note d UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature Tj=25℃) 2018. 10. 19 2/11 Revision No : 0 FTK2210DFN22 |
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