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AW005S500D датащи(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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AW005S500D датащи(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 2 page ![]() AW005S500D 0.5A 50kV --nS High Voltage Silicon Rectifier Assembly ----------------------------------------------------------------------------------------------------------------------------- ------ GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2021-01 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier assembly is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. High current . low forward voltage 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Accelerator power supply. 2. High voltage test equipment circuit . 3. General purpose high voltage rectifier. 4. Environmental desulfurization system. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: screw holes. 3. Net weight: 120grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: HVC-152520 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 50 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C 60 kV Average Forward Current Maximum IFAVM TA=25°C; 50Hz Half-Sine Wave; Resistance load 0.5 A Non-Repetitive Forward Surge Current IFSM TA=25°C; 50Hz Half-Sine Wave; 8.3mS 15 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature TSTG -40~+150 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 60 V Maximum Reverse Current IR1 at 25°C; at VRRM 5.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz -- pF |
Аналогичный номер детали - AW005S500D |
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Аналогичное описание - AW005S500D |
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