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FTK0976F датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK0976F
подробное описание детали  100V N-Channel MOSFETs
PDF  5 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0976F датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK0976F Datasheet HTML 1Page - First Silicon Co., Ltd FTK0976F Datasheet HTML 2Page - First Silicon Co., Ltd FTK0976F Datasheet HTML 3Page - First Silicon Co., Ltd FTK0976F Datasheet HTML 4Page - First Silicon Co., Ltd FTK0976F Datasheet HTML 5Page - First Silicon Co., Ltd  
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100V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.054
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=100V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=+20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=15A
---
7.6
9.2
mΩ
VGS=4.5V , ID=8A
---
10.8
14
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
11
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=80V , VGS=10V , ID=8.5A
---
39.7
80
nC
Qgs
Gate-Source Charge3 , 4
---
5.4
10
Qgd
Gate-Drain Charge3 , 4
---
11.2
22
Td(on)
Turn-On Delay Time3 , 4
VDD=50V , VGS=10V , RG=6Ω
ID=1A
---
14.6
30
ns
Tr
Rise Time3 , 4
---
21.5
44
Td(off)
Turn-Off Delay Time3 , 4
---
54
108
Tf
Fall Time3 , 4
---
84.3
168
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
2550
5100
pF
Coss
Output Capacitance
---
685
1370
Crss
Reverse Transfer Capacitance
---
42
84
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.43
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
42
A
ISM
Pulsed Source Current
---
---
84
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V,VGS=10V,L=0.1mH,IAS=65A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2018. 11. 26
2/5
Revision No : 0
FTK0976F



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