100V P-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-100

V

Gate-Sou

rce Voltage

± 20

V

-30

A

-19

A

Drain Current – Pulsed

1

-120

A

EAS

Single Pulse Avalanche Energy

2

180

mJ

IAS

Single Pulse Avalanche Current

2

-60

A

102

W

Power Dissipation – Derate above 25℃

0.82

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to Case

---

1.22

℃/W

Thermal Resistance Junction to ambient

---

62

℃/W

BVDSS

RDSON

ID

-100V

45m

Ω

-30A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -100V,-30A, RDS(ON) 45m

Ω@VGS = -10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

 Networking

 Load Switch

 LED applications

Thermal Characteristics

TO-252 Pin Configuration

G

D

S

1

1. Gate

2. Drain

3. Source

3

2

SEMICONDUCTOR

TECHNICAL DATA

FTK0959D

2019. 11. 18

1/5

Revision No : 0