поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

FTK0956D датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK0956D
подробное описание детали  100V N-Channel MOSFETs
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0956D датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK0956D Datasheet HTML 1Page - First Silicon Co., Ltd FTK0956D Datasheet HTML 2Page - First Silicon Co., Ltd FTK0956D Datasheet HTML 3Page - First Silicon Co., Ltd FTK0956D Datasheet HTML 4Page - First Silicon Co., Ltd FTK0956D Datasheet HTML 5Page - First Silicon Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
100V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25
℃ , ID=1mA
---
0.09
---
V/
℃
IDSS
Drain-Source Leakage Current
VDS=100V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=125
℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=10A
---
95
115
mΩ
VGS=4.5V , ID=8A
---
100
125
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/
℃
gfs
Forward Transconductance
VDS=10V , ID=2A
---
8.7
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=50V , VGS=10V , ID=2A
---
20
40
nC
Qgs
Gate-Source Charge3,4
---
3.2
6
Qgd
Gate-Drain Charge3,4
---
3.6
7
Td(on)
Turn-On Delay Time3,4
VDD=50V , VGS=10V , RG=3.3Ω
ID=1A
---
18
36
ns
Tr
Rise Time3,4
---
4
8
Td(off)
Turn-Off Delay Time3,4
---
40
80
Tf
Fall Time3,4
---
3
6
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
1400
2800
pF
Coss
Output Capacitance
---
60
120
Crss
Reverse Transfer Capacitance
---
35
70
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2
4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
12
A
ISM
Pulsed Source Current
---
---
24
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25
℃
---
---
1
V
trr
Reverse Recovery Time3
IS=1A , dI/dt=100A/µs TJ=25
℃
---
38
---
ns
Qrr
Reverse Recovery Charge3
---
27
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=11A.,RG=25Ω
,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
FTK0956D
2018. 04. 09
2/5
Revision No : 0



Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com