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FTK15N12CSDFN датащи(PDF) 1 Page - First Silicon Co., Ltd |
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FTK15N12CSDFN датащи(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 7 page ![]() VSSS RSS(on) Max IS Max 12 V 5.9 m Ω @ 4.5 V 15 A 6.5 m Ω @ 3.8 V 8.2 m Ω @ 3.1 V 11.0 m Ω @ 2.5 V • 2 kV ESD HBM • Common-Drain Type • ESD protected gate • Pb-Free, Halogen Free and RoHS compliance CSDFN (Chip scale DFN) Absolute Maximum Ratings at Ta=25℃ (Note 1) Parameter Symbol Maximum Units Source to Source Voltage V SSS 12 V Gate to Source Voltage VGSS 8 V Source Current (DC) I S 15 A Source Current (Pulse) PW≤10μs, duty cycle≤1% I S P 60 A Total Dissipation (Note 2) PT 1.5 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg 55 to +150 ℃ Note 1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. • Lithium ion battery • RSS(on) Max.= 5.9mΩ(VGS= 4.5V) Features Applications SEMICONDUCTOR TECHNICAL DATA FTK15N12CSDFN 2019. 08. 16 1/7 Revision No : 0 2.11(mm)×1.18(mm)×0.50 (mm) 12V, 5.9m Ω, 15A, Dual N-Channel Schematic diagram |
Аналогичный номер детали - FTK15N12CSDFN |
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Аналогичное описание - FTK15N12CSDFN |
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