FTK138 datasheet(2/5 Pages) FS

номер детали	FTK138

подробное описание детали	POWER MOSFET 200 mAmps, 50 Volts

PDF	5 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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2 / 5 page

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

–

Vdc

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)

IDSS

–

0.1

0.5

µAdc

Gate–Source Leakage Current (VGS = ±20 Vdc, VDS = 0Vdc)

IGSS

–

±0.1

µAdc

ON CHARACTERISTICS (Note 1.)

Gate-Source Threshold Voltage

(VDS= VGS, ID = 1.0 mAdc)

VGS(th)

0.5

–

1.5

Vdc

Static Drain–Source On–Resistance

(VGS= 2.75 Vdc, ID < 200 mAdc, TA = -40 C to +85 C)

(VGS= 5.0 Vdc, ID = 200 mAdc)

rDS(on)

–

5.6

Ω

Forward Transconductance

(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 KHz)

gFS

100

–

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

–

Output Capacitance

Coss

–

Transfer Capacitance

Crss

–

3.5

5.0

SWITCHING CHARACTERISTICS (Note 4.)

Turn–On Delay Time

(VCC = 30 Vdc, ID = 0 2 Adc)

td(on)

–

Turn–Off Delay Time

td(off)

–

1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

2. Switching characteristics are independent of operating junction temperature.

Characteristic

Symbol

Min

Max

Unit

Typ

2008. 1. 28

2/5

FTK138

Revision No : 0

(VDS = 50 Vdc, VGS = 0 Vdc)

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

(VDG = 25 Vdc, VGS = 0, f = 1 MHz)

–

3.5

–

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