FTK123 datasheet(2/4 Pages) FS

номер детали	FTK123

подробное описание детали	N-CHANNEL POWER MOSFET

PDF	4 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250 µAdc)

V(BR)DSS

100

–

Vdc

Zero Gate Voltage Drain Current

(VGS = 0, VDS = 100 Vdc)

TJ = 125 C

IDSS

–

µAdc

Gate–Body Leakage Current

(VGS = 20 Vdc, VDS = 0)

IGSS

–

nAdc

ON CHARACTERISTICS (Note 4.)

Gate Threshold Voltage

(VDS= VGS, ID = 1.0 mAdc)

VGS(th)

0.8

–

2.8

Vdc

Static Drain–Source On–Resistance

(VGS= 10 Vdc, ID = 100 mAdc)

rDS(on)

–

5.0

6.0

Ω

Forward Transconductance

(VDS = 25 Vdc, ID = 100 mAdc)

gFS

–

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS= 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

–

Output Capacitance

(VDS= 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

–

9.0

–

Reverse Transfer Capacitance

(VDS= 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss

–

4.0

–

SWITCHING CHARACTERISTICS (Note 4.)

Turn–On Delay Time

(VCC = 30 Vdc, IC = 0.28 Adc,

VGS= 10 Vdc, RGS = 50 Ω)

td(on)

–

Turn–Off Delay Time

td(off)

–

REVERSE DIODE

Diode Forward On–Voltage

(ID = 034Adc, VGS = 0 Vdc)

VSD

–

1.3

4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

Characteristic

Symbol

Min

Max

Unit

Typ

TJ = 25 C

2007. 12. 18

2/4

FTK123

Revision No : 0

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