FTK84 datasheet(2/4 Pages) FS

2 / 4 page

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Transfer Characteristics

Figure 2. On–Region Characteristics

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250 µAdc)

V(BR)DSS

–

Vdc

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)

IDSS

–

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0Vdc)

IGSS

–

±60

µAdc

ON CHARACTERISTICS (Note 1.)

Gate-Source Threshold Voltage

(VDS= VGS, ID = 1.0 mAdc)

VGS(th)

0.8

–

2.0

Vdc

Static Drain-to-Source On–Resistance

(VGS= 5.0 Vdc, ID = 100 mAdc)

rDS(on)

–

5.0

Ω

Transfer Admittance

(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 MHz)

|yFS|

–

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS= 5.0 Vdc)

Ciss

–

Output Capacitance

Coss

–

Transfer Capacitance

Crss

–

5.0

–

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

(VDD = -15 Vdc, ID = -2.5 Adc,

RL= 50 Ω)

td(on)

–

2.5

–

Rise Time

–

1.0

–

SOURCE-DRAIN DIODE CHARACTERISTICS

Continuous Current

–

0.130

1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

2. Switching characteristics are independent of operating junction temperature.

Characteristic

Symbol

Min

Max

Unit

Typ

2007. 12. 18

2/4

FTK84

Revision No : 0

(VDS = 50 Vdc, VGS = 0 Vdc)

(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125 C)

Turn–Off Delay Time

Fall Time

Gate Charge

Forward Voltage (Note 2.)

Pulsed Current

(VDS= 5.0 Vdc)

(VDG= 5.0 Vdc)

td(off)

VSD

ISM

8.0

6000

2.5

0.1

0.520

–

1.5

0.6

0.5

0.4

0.3

0.2

0.1

2.5

3.5

VGS, GATE SOURCE VOLTAGE (VOLTS)

VDS=10V

-55 C

25 C

150 C

1.0

2.0

3.0

4.0

5.0

0.5

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

6.0

7.0

8.0

9.0

VDS, DRAIN SOURCE VOLTAGE (VOLTS)

TJ=25 C

VGS=3.5V

3.25V

3.0V

2.75V

2.5V

2.25V

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