MTP23P06VG datasheet(1/7 Pages) VBSEMI

номер детали	MTP23P06VG

подробное описание детали	P-Channel 60-V (D-S) MOSFET

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PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

Qg (Typ)

- 60

0.062 at V GS = - 10 V

- 20

12.5

0.074 at VGS = - 4.5 V

- 15

S

G

D

P-Channel MOSFET

Notes:

a. See SOA curve for voltage derating.

b. Surface Mounted on 1" x 1" FR-4 boad.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

- 20

A

TC = 100 °C

- 12

Pulsed Drain Current

IDM

- 60

Continuing Source Current (Diode Conduction)

IS

- 12

Avalanche Current

IAS

- 12

Single Pulse Avalanche Energy

L = 0.1 mH

EAS

7.2

mJ

Maximum Power Dissipation

TC = 25 °C

PD

60a

W

TA = 25 °C

2b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Junction-to-Ambientb

t

≤ 10 sec

RthJA

20

25

°C/W

Steady State

62

75

Junction-to-Case

RthJC

56

P-Channel 60-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % UIS Tested

APPLICATIONS

• Load Switch

TO-220AB

Top View

GD S

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

MTP23P06VG

1

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Аналогичный номер детали - MTP23P06VG

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