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LM148E/883 датащи(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM148E/883
подробное описание детали  Quad 741 Op Amps
PDF  17 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM148E/883 датащи(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
DC PARAMETERS (The following conditions apply to all parameters, unless otherwise specified.) V
CC = ±15V, RS =0
Symbol
Parameter
Conditions
Notes
Min Max
Units
Sub-
groups
CMRR
Common Mode Rejection Ratio +V
CM = ±12V, RS =50
70
dB
1, 2, 3
I
OS+
Short Circuit Current
−55
−14
mA
1
I
OS
Short Circuit Current
14
55
mA
1
I
CC
Power Supply Current
0.4
3.6
mA
1
0.4
4.5
mA
2, 3
A
VS+
Large Signal Voltage Gain
V
OUT = 0V to +10V, RL > 2k
50
V/mV
4
25
V/mV
5, 6
A
VS
Large Signal Voltage Gain
V
OUT = 0V to −10V, RL > 2k
50
V/mV
4
25
V/mV
5, 6
V
out+
Output Voltage Swing
R
L =10k
+12
V
4,5,6
R
L =2k
+10
V
4,5,6
V
out
Output Voltage Swing
R
L =10k
−12
V
4,5,6
R
L =2k
−10
V
4,5,6
Electrical Characteristics
AC PARAMETERS (The following conditions apply to all parameters, unless otherwise specified.) V
CC = ±15V, AV =1,RS =
0
Symbol
Parameter
Conditions
Notes
Min Max
Units
Sub-
groups
±SR
Slew Rate
0.2
V/µs
7, 8A, 8B
G
BW
Gain Bandwidth Product
0.4
1.4
MHz
7, 8A, 8B
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3: The maximum power dissipation for these devices must be derated at elevated temperatures and is dicated by TJMAX, θJA, and the ambient temperature,
TA. The maximum available power dissipation at any temperature is Pd =(TJMAX −TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is less.
Note 4: Human body model, 1.5 k
Ω in series with 100 pF
Note 5: Parameter Guaranteed, Not Tested.
Cross Talk Test Circuit V
S = ±15V
20120506
20120507
www.national.com
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