TIP32C datasheet(4/6 Pages) ONSEMI

4 / 6 page

TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C

3–4

Motorola Bipolar Power Transistor Device Data

TJ, JUNCTION TEMPERATURE (°C)

103

– 0.4

101

100

10–2

102

10–1

10–3

107

105

104

102

106

103

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.05 0.07

0.3

3.0

0.03

100

7.0

0.1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE = 2.0 V

5.0

0.7 1.0

0.5

1.6

2.0

5.0

1000

1.0

0.8

0.4

100

200

500

°C

TJ = 150°C

– 55

°C

1.2

1.4

0.003

IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.4

1.2

0.6

0.2

0.005 0.01 0.02 0.03 0.05

0.1

+ 2.5

IC = 0.3 A

100

120

160

140

TJ = 25°C

1.0 A

3.0 A

0.2 0.3 0.5

1.0

2.0 3.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

+ 2.0

+ 1.5

+ 1.0

+ 0.5

– 0.5

– 1.0

– 1.5

– 2.0

– 2.5

0.003 0.005 0.01

0.02

0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0

*APPLIES FOR IC/IB ≤ hFE/2

TJ = – 65°C TO + 150°C

θVC FOR VCE(sat)

θVB FOR VBE

Figure 11. Temperature Coefficients

– 0.3 – 0.2 – 0.1

+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5

+ 0.6

Figure 12. Collector Cut–Off Region

Figure 13. Effects of Base–Emitter Resistance

VCE = 30 V

TJ = 150°C

100

°C

REVERSE

FORWARD

ICES

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

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