CS213

Neotec Semiconductor Ltd.

12/13

CS213DS V1.5 2014/07/18

www.neotec.com.tw

The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.

*1) If the threshold voltage of FET is lower than 0.4V, the FET may failed to stop the charging current.

If the FET has a threshold voltage equal to or higher than the over-discharge detection voltage, discharging may be stopped

before over-discharge is detected.

If the charger voltage is higher than the withstanding voltage between the gate and source, the FET may be damaged.

*2) Employing an over-specification (listed in above table) R1 may result in over-charge detection voltage and release voltage

higher than the defined voltage.

If R1 has a higher resistance, the IC may be damaged caused by over absolute maximum rating of VDD voltage when a

charger is connected reversely.

*3) Applying a smaller capacitance C1 to system, DO may failed to function when load short-circuiting is detected.

*4) R1 and R2 resistors are current limit resistance for a charger connected reversibly or a large voltage charger that exceeds

the absolute rating for VCC is connected, when we connect reverse charger the current flows from charger to R2, internal

ESD diode and R1. This current will increase R1 voltage drop. Which can exceed VCC(max). In this case better to use smaller

value for R1 and bigger value for R2. But small value of R1 will reduce R-C filter performance and system ESD reliability. Too

big value of R2 can cause over-current automatic release problem.

If R2 resistance is higher than 2kΩ, the charging current may not be cut when a high-voltage charger is connected.

Caution: 1) The above constants may be changed without notice.

2) The application circuit above is for reference only. To determine the correct constants,

evaluation of actual application is required.

Precautions: 1) The application condition for the input voltage, output voltage, and load current

should not exceed the package power dissipation.

2) Do not apply an electrostatic discharge to this IC that exceeds the performance ratings

of the built-in electrostatic protection circuit.