TIP110 datasheet(1/6 Pages) ONSEMI

номер детали	TIP110

подробное описание детали	Plastic Medium-Power Complementary Silicon Transistors

PDF	6 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

Logo

1 / 6 page

1

Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —

hFE = 2500 (Typ) @ IC = 1.0 Adc

• Collector–Emitter Sustaining Voltage — @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115

VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116

VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc

• Monolithic Construction with Built–in Base–Emitter Shunt Resistors

• TO–220AB Compact Package

*MAXIMUM RATINGS

Rating

Symbol

TIP110,

TIP115

TIP111,

TIP116

TIP112,

TIP117

Unit

Collector–Emitter Voltage

VCEO

60

80

100

Vdc

Collector–Base Voltage

VCB

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

2.0

4.0

Adc

Base Current

IB

50

mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

50

0.4

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Unclamped Inductive Load Energy —

Figure 13

E

25

mJ

Operating and Storage Junction

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.5

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

0

20

40

60

80

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

40

20

60

140

TC

0

2.0

1.0

3.0

TA

TC

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP110/D

TIP110

TIP111

TIP112

TIP115

TIP116

TIP117

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 – 80 – 100 VOLTS

50 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

CASE 221A–06

TO–220AB

REV 1

Аналогичный номер детали - TIP110

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP110	146Kb / 3P	POWER TRANSISTORS(2.0A,60-100V,50W)
Motorola, Inc	TIP110	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Power Innovations Ltd	TIP110	101Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP110	72Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jun-1999
Fairchild Semiconductor	TIP110	49Kb / 4P	Monolithic Construction With Built In Base- Emitter Shunt Resistors

More results

Аналогичное описание - TIP110

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BDX53B	169Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors
Boca Semiconductor Corp...	TIP110	153Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	2N6040	114Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors April, 2002 ??Rev. 4
ON Semiconductor	BDX53B	87Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors February, 2006 ??Rev. 12
New Jersey Semi-Conduct...	MJE2100	144Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
New Jersey Semi-Conduct...	MJE1090	143Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	2N6040	152Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 10
	TIP110	148Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 8
	TIP120	144Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 9
	BDX53B	115Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 15

More results

TIP110 датащи(PDF) 1 Page - ON Semiconductor

TIP110 датащи(HTML) 1 Page - ON Semiconductor

Аналогичный номер детали - TIP110

Аналогичное описание - TIP110

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL