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LM3203 датащи(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали LM3203
подробное описание детали  Step-Down DC-DC Converter with Bypass Mode for CDMA / WCDMA RF Power Amplifiers
PDF  15 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD,PVIN to SGND
−0.2V to +6.0V
PGND to SGND
−0.2V to +0.2V
EN, FB, BYP, V
CON
(SGND −0.2V)
to (V
DD +0.2V)
w/6.0V max
SW, BYPOUT
(PGND −0.2V)
to (PV
IN +0.2V)
w/6.0V max
PV
IN to VDD
−0.2V to +0.2V
Continuous Power Dissipation
(Note 3)
Internally Limited
Junction Temperature (T
J-MAX)
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec)
+260˚C
ESD Rating (Note 4)
Human Body Model
2.0 kV
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.7V to 5.5V
Recommended Load Current
PWM Mode
0mA to 500mA
Bypass Mode
0mA to 500mA
Junction Temperature (T
J) Range
−30˚C to +125˚C
Ambient Temperature (T
A) Range
(Note 5)
−30˚C to +85˚C
Thermal Properties
Junction-to-Ambient Thermal
100˚C/W
Resistance (
θ
JA), TLP10 Package (Note 6)
Electrical Characteristics (Notes 2, 7) Limits in standard typeface are for T
A =TJ = 25˚C. Limits in bold-
face type apply over the full operating ambient temperature range (−30˚C
≤ T
A =TJ
≤ +85˚C). Unless otherwise noted, speci-
fications apply to the LM3203 with: PV
IN =VDD = EN = 3.6V, BYP = 0V, VCON = 0.267V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IN
Input Voltage Range
(Note 8)
PV
IN =VDD =VIN
2.7
5.5
V
V
FB, MIN
Feedback Voltage at
Minimum Setting
V
CON = 0.267V, VIN = 3.6V
0.250
0.267
0.284
V
V
FB, MAX
Feedback Voltage at
Maximum Setting
V
CON = 1.20V, VIN = 4.2V
1.176
1.200
1.224
V
OVP
Over-Voltage
Protection Threshold
(Note 9)
100
150
mV
I
SHDN
Shutdown Supply
Current (Note 10)
EN = SW = BYPOUT = V
CON =FB=0V
0.1
3
µA
I
Q_PWM
DC Bias Current into
V
DD
V
CON = 0.267V, FB = 2V, BYPOUT = 0V, No
Switching
675
780
µA
I
Q_BYP
BYP = 3.6V, V
CON = 0.5V, No Load
680
780
µA
R
DSON (P)
Pin-Pin Resistance for
P-FET
I
SW = 500mA
320
450
m
R
DSON (N)
Pin-Pin Resistance for
N-FET
I
SW = − 200mA
310
450
m
R
DSON
(BYP)
Pin-Pin Resistance for
Bypass FET
I
BYPOUT = 500mA
85
120
m
I
LIM-PFET
Switch Current Limit
(Note 11)
700
820
940
mA
I
LIM-BYP
Bypass FET Current
Limit
(Note 12)
800
1000
1200
mA
F
OSC
Internal Oscillator
Frequency
1.7
2
2.2
MHz
V
IH
Logic High Input
Threshold for EN, BYP
1.20
V
V
IL
Logic Low Input
Threshold for EN, BYP
0.4
V
I
PIN
Pin Pull Down Current
for EN, BYP
EN, BYP = 3.6V
5
10
µA
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