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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISCP234P датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCP234P датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc Website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistors ISCP234P DESCRIPTION · DC Current Gain -hFE :80-100@ IC= - 3A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current -2 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃ /W |
Аналогичный номер детали - ISCP234P |
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Аналогичное описание - ISCP234P |
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